Site- and energy-controlled pyramidal quantum dot heterostructures
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This thesis is devoted to the study of microcavity polariton systems, in which the strong coupling occurs between more than one exciton or photon modes i.e. multimode polaritons. The first part of this work states the theoretical background of light-matter ...
EPFL2017
This thesis is dedicated to the discovery and progressive study of quantum emitters embedded in the shell of coaxial gallium arsenide/ aluminum gallium arsenide nanowires. The bottom-up core/shell nanowires were grown in a molecular beam epitaxy machine. D ...
EPFL2015
We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 mu m probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum ...
Optical Soc Amer2017
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A hallmark of quantum control is the ability to manipulate quantum emission at the nanoscale. Through scanning tunneling microscopy-induced luminescence (STML), we are able to generate plasmonic light originating from inelastic tunneling processes that occ ...
2020
This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...
EPFL2017
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We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...
Amer Inst Physics2016
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Understanding the dynamics of atomic vibrations confined in quasi-zero dimen- sional systems is crucial from both a fundamental point-of-view and a technologi- cal perspective. Using ultrafast electron diffraction, we monitored the lattice dynamics of GaAs ...
2017
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Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...
Multiply excited states in semiconductor quantum dots feature intriguing physics and play a crucial role in nanocrystal-based technologies. While photoluminescence provides a natural probe to investigate these states, room-temperature single-particle spect ...
We demonstrate the growth of defect-free zinc-blende GaAs nanomembranes by molecular beam epitaxy. Our growth studies indicate a strong impact of As-4 re-emission and shadowing in the growth rate of the structures. The highest aspect ratio structures are o ...