Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates
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Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
The kinetics of surface processes during the growth of GaN by molecular-beam epitaxy (MBE) with ammonia as the source of reactive nitrogen is studied theoretically and experimentally. A model of surface processes is developed taking into account specific e ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
Summary form only given. Radiative coupling between one or more quantum wells (QWs) and the single-cavity mode of a moderate reflectivity semiconductor microcavity leads to normal-mode coupling (NMC), observed as a doubled-peaked spectrum in reflection, tr ...
1998 Technical Digest Series Vol.7 (IEEE Cat. No.98CH36236). Opt. Soc. America Washington DC USA1998
NH3 is used as a nitrogen precursor for growing III-V nitride materials by molecular beam epitaxy on c-plane sapphire substrates. The sapphire nitridation step is followed in situ by reflection high-energy electron diffraction. Subsequently, it is demonstr ...
The kinetics of GaN growth by MBE using ammonia as the reactive nitrogen source is studied both under Ga-rich and N-rich conditions. It is shown that adsorption site blocking by Ga and N atoms as well as by surface NH, complexes is a crucial factor to cont ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
GaN/AlxGa1-xN quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is ...
Microcavity light emitting diodes (MCLEDs) present several interesting features compared to conventional LEDs such as narrow linewidth, improved directionality and high efficiency. We report here on MCLEDs with a top emitting geometry. The MCLED layers wer ...