Publication

Competition between magnetic field dependent band structure and coherent backscattering in multiwall carbon nanotubes

Publications associées (33)

Bulk and surface band structure of the new family of semiconductors BiTeX (X=I, Br, Cl)

Marco Grioni, Arnaud Magrez, Oleg Yazyev, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi, Gabriel Albert Autes, Luca Moreschini, Simon Karl Moser, Jens Christian Johannsen

We present an overview of the new family of semiconductors BiTeX (X = I, Br, Cl) from the perspective of angle resolved photoemission spectroscopy. The strong band bending occurring at the surface potentially endows them with a large flexibility, as they a ...

Elsevier2015

In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...

EPFL2015

Ultrafast Optical Control of the Electronic Properties of ZrTe5

Marco Grioni, Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi

We report on the temperature dependence of the ZrTe5 electronic properties, studied at equilibrium and out of equilibrium, by means of time and angle resolved photoelectron spectroscopy. Our results unveil the dependence of the electronic band structure ac ...

Amer Physical Soc2015

Review and prospects of magnonic crystals and devices with reprogrammable band structure

Dirk Grundler

Research efforts addressing spin waves (magnons) in micro- and nanostructured ferromagnetic materials have increased tremendously in recent years. Corresponding experimental and theoretical work in magnonics faces significant challenges in that spin-wave d ...

Iop Publishing Ltd2014

Bi2Te3-xSex series studied by resistivity and thermopower

László Forró, Ana Akrap

We study the detailed temperature and composition dependence of the resistivity, rho(T), and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity o ...

Epl Association, European Physical Society2014

Calculation of the Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

Michael Graetzel, Stanley David Tilley, Matthias Schmid

A physical model is presented for the semiconductor electrode of a photoelectrochemical cell. The model accounts for the potential drop in the Helmholtz layer and thus enables description of both band edge pinning and unpinning. The model is based on the c ...

American Chemical Society2014

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

Correlations and renormalization of the electron-phonon coupling in the honeycomb Hubbard ladder and superconductivity in polyacene

Ronny Thomale

We have performed extensive density matrix renormalization group (DMRG) studies of the Hubbard model on a honeycomb ladder. The band structure (with Hubbard U = 0) exhibits an unusual quadratic band touching at half-filling, which is associated with a quan ...

Amer Physical Soc2013

Controlling edge states in the Kane-Mele model via edge chirality

Oleg Yazyev, Gabriel Albert Autes

We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band structures of the one-dimensional honeycomb lattice ribbons show the presence of t ...

Wiley-V C H Verlag Gmbh2013

Band-edge levels in semiconductors and insulators: Hybrid density functional theory versus many-body perturbation theory

Alfredo Pasquarello, Wei Chen

We compare band-edge levels as obtained with hybrid functionals and GW perturbation theory for a wide class of materials. For sp-bonded semiconductors, a close agreement is demonstrated. However, deviations for other materials are more significant and rang ...

2012

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