Polarisation reversal in ferroelectric PVDF and PZT films
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Dielectric properties of perovskites are studied both to gain insight into fundamental aspects of the freezing of polar disorder, and to investigate their technological potential. The dynamics of freezing of polar disorder is investigated in single crystal ...
Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...
The switching, fatigue and rejuvenation phenomena of ferroelectric PZT thin films with differently processed electrode-PZT interfaces and of different thicknesses have been investigated. The ferroelectric contribution to the switching parameters has been i ...
Sol-gel processing parameters of Pb0.99Zr0.55Sn0.37Ti0.06Nb0.02O3 thin films were studied. Effects of H2O, HNO3 and formamide additives on solution gelation and film properties were investigated. Thin films were prepared on Ti/Pt and Ta/Pt metallized Si su ...
A strong influence of ferroelectric polarization on d.c. conduction has been observed in PZT thin films with Pt electrodes. It is shown that the current-voltage response taken for measuring times of hundreds of seconds at room temperature is controlled by ...
The switching of the sandwich structure ''ferroelectric+thin dielectric layer'' is theoretically studied. The behavior of the remanent polarization, P-r, coercive field, E(c), maximal polarization on the loop, P-s, and the slope of the hysteresis loop at E ...
