Microstructure and growth modes of stoichiometric NiAl and Ni3Al thin films deposited by r.f.-magnetron sputtering
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The in-situ growth of PbZrxTi1-xO3 (PZT) and PbTiO3 (PT) thin films by reactive sputter deposition has been investigated for applications with silicon substrates. In-situ deposition from three simultaneously operating magnetron sources was applied. At the ...
Physisorbed and covalently bound Langmuir-Blodgett (LB) monolayers of sulfur-bearing lipids on mica and on gold substrates, resp., have been studied. Scanning force microscopy, in topog. and friction modes as well as in contact and non-contact modes have b ...
Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconization procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surfac ...
Electrodeposition of magnetic multilayers was achieved in the cylindrical pores of a nuclear track-etched polycarbonate membrane. An assembly of wires with an average diameter of 80 nm and a length of 6 μm was obtained. Multilayers in these wires were grow ...
Sol-gel derived lead zirconate titanate (PZT) thin films are being investigated for micromechanical applications. A synthesis technique which involves the spin coating of several thin layers followed by rapid thermal annealing to crystallize the perovskite ...
The in-situ reactive sputter deposition of PbTiO3 on Pt/Ti/SiO2/Si from two metallic targets was investigated. A minimal lead oxide flux of two to three times the titanium oxide flux is needed in order to obtain stoichiometric films with the perovskite str ...
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photolum ...
The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...