Publication

Semiconductor vertical quantum structures self-formed in inverted pyramids

Publications associées (80)

Tunneling and coupling between one-dimensional states in double quantum wires

Elyahou Kapon, Marc-André Dupertuis, Daniel Oberli

Evidence of tunneling and electronic coupling in a one-dimensional system is reported. This is accomplished by comparing low-temperature photoluminescence and photoluminescence excitation spectra of GaAs double quantum wires of different barrier widths wit ...

1998

Minimum of oscillator strength of excitons in ultra-narrow GaAs/AlGaAs quantum wells: Theory and experiment

A theoretical and experimental study of the exciton in ultra-narrow quantum wells (QWs) is performed. A crossover from strong (separate localization of electron and hole levels) to weak confinement (with localization of excitonic center of mass) is predict ...

1998

Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400 degrees C

Nicolas Grandjean

Strained In0.35Ga0.65As/GaAs quantum wells of various thicknesses (6-16 monolayers) obtained by molecular beam epitaxy at 400 degrees C were studied by optical pumping techniques at 4 K. Improved quantum well optical properties, due to significant increase ...

1995

Cathodoluminescence investigations of three-dimensional island formation in quantum wells

Romuald Houdré, Jean-François Carlin, Alok Rudra

When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...

1995

Optical spectroscopy of semiconductor quantum wires

Elyahou Kapon, Marc-André Dupertuis, Daniel Oberli

We investigated the optical properties of excitons in quasi-one-dimensional semiconductor quantum structures by photoluminescence and photoluminescence excitation: High-quality GaAs/AlxGa1-xAs heterostructures were grown using low-pressure organometallic c ...

1995

Characterization of Lattice-Matched Single In1-Xgaxasyp1-Y Quantum-Wells Grown by Conventional Liquid-Phase Epitaxy

Guillaume Wagner

In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...

1994

Measurements of the Diffusion Length in Gaas/Algaas Quantum-Well (Qw) Structures by Cathodoluminescence - Comparison of the Bulk and Qw Diffusion Channels

Franz-Karl Reinhart, Jean-Daniel Ganière

In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...

Iop Publishing Ltd1993

Density Dependence of Electron-Hole Plasma Lifetime in Semiconductor Quantum-Wells

We report on an investigation of the electron-hole (e-h) plasma decay time tau(tot) versus e-h pair density in semiconductor quantum wells. We determine the density reached in a steady-state photoluminescence experiment from the optical spectra and compare ...

1992

Zinc Diffusion in Gaas and Zinc-Induced Disordering of Gaas Algaas Multiple Quantum-Wells - a Multitechnique Study

Philippe Buffat, Franz-Karl Reinhart, Jean-Daniel Ganière

A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...

1991

Polarization Dependence of 2-Photon Transitions in Quantum-Wells

Alfredo Pasquarello

We give explicity the polarization dependence of two-photon subband-subband transitions in semiconductor quantum wells. We consider transitions from heavy-hole subbands as well as from light-hole subbands. We study the polarization dependence in the case o ...

1991

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