Interferometric measurement of the elongation of a pulsed diode laser
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Characteristics of one-cascade (1.06 double right arrow 1.24 mum) and two-cascade (1.06 double right arrow 1.24 double right arrow 1.48 mum) phosphorus-doped fiber Raman lasers are studied. The cavities of both lasers are formed by Bragg gratings written d ...
Because of the strong electron-phonon coupling of the emitting 3d orbital in transition-metal (TM) ions, 3d systems exhibit luminescence with typically several hundred nm of spectral bandwidth. TM-ion-doped materials are, therefore, of high interest for ap ...
We examine the primary challenges for building a practical and competitive holographic random access memory (HRAM) system, specifically for size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporati ...
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In this paper, we present a novel Brillouin fiber-ring laser utilizing an unbalanced Mach-Zehnder interferometer (UMZI) as coupling device. The laser is pumped by a distributed-feedback laser diode and shows continuous-wave and single-frequency operation. ...
WE examine the present state of holographic random access memory (HRAM) systems and address the primary challenges that face this technology, specifically size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture ...
Persistent spectral hole burning is studied for several free-based and metallo-naphthalocyanine derivatives in polymer hosts. These materials exhibit a strong 0-0 absorption band in the region 800 nm matching the wavelength range of most semiconductor diod ...
Microgun-pumped blue lasers with lasing thresholds in the 4-20 kW/cm(2) range for temperatures between 83 and 225 K were fabricated by molecular beam epitaxy. The devices exploit graded index, separate confinement Zn1-xCdxSe/ZnSe heterostructures and use a ...
We present the design of a highly efficient, pulsed ammonia laser which is optically pumped by a commercial TEA CO2 laser and is line tunable in the spectral range of 780-930 cm(-1). The power, spectral, and temporal characteristics of the laser have been ...
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented, Threshold current densities in broad area lasers were measured to be as ...