Laser generated (Al,Ga)As microstructures with high luminescence efficiency
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A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed ...
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The stripe junction geometry of laser diodes is produced by laser alloying. The application of such diodes is restricted by nonlinearities of the light-current characteristics, by transients and multimode operation. In the future, they might be replaced by ...
