Êtes-vous un étudiant de l'EPFL à la recherche d'un projet de semestre?
Travaillez avec nous sur des projets en science des données et en visualisation, et déployez votre projet sous forme d'application sur Graph Search.
In the present work, several series with variation of deposition parameters such as hydrogen dilution ratio, VHF-power and plasma excitation frequency fexc have been extensively analyzed. Compared with conventional' more-stable layers obtained at 200-250 °C and high H2 dilution ratios of about 10, it was observed that electrical transport properties after light-induced degradation of layers deposited at
moderately high' temperatures (300-350 °C) are equivalent but required lower H2 dilution ratios (between 2 and 4). As a consequence, the deposition rate of more stable layers obtained at moderately high temperatures is increased by a factor of 2. Moreover, optical gaps of a-Si:H deposited at 300-350 °C are significantly lower (by approx. 10 meV); furthermore, they decrease with fexc.
Johann Michler, Ivo Utke, Xavier Maeder