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Effect of the Microstructure on the Electronic Transport in Hydrogenated Microcrystalline Silicon

Publications associées (46)

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Self-compensation due to point defects in Mg-doped GaN

Alfredo Pasquarello, Giacomo Francesco Leonardo Miceli

Using hybrid density functional theory, we address point defects susceptible to cause charge compensation upon Mg doping of GaN. We determine the free energy of formation of the nitrogen vacancy and of several Mg-related defects. The entropic contribution ...

Amer Physical Soc2016

Quantification of Valleys of Randomly Textured Substrates as a Function of Opening Angle: Correlation to the Defect Density in Intrinsic nc-Si:H

Jan-Willem Alexander Schüttauf, Simon Hänni

Optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells are strongly influenced by the morphology of underlying substrates. By texturing the substrates, the photogenerated current of nc-Si:H solar cells can increase ...

Amer Chemical Soc2016

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

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The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

American Chemical Society2015

Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

Christophe Ballif, Franz-Josef Haug, Jan-Willem Alexander Schüttauf, Matthieu Despeisse, Michael Elias Stückelberger, Yannick Samuel Riesen

High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light so ...

American Institute of Physics2014

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Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect ...

Institute of Physics2014

High-Quality Microcrystalline Silicon for Efficient Thin-Film Solar Cells

Grégory Bugnon

This thesis investigates the link between the plasma deposition conditions and microcrystalline silicon (μc-Si:H) material quality for thin-film silicon photovoltaic applications. The role of interfaces and the μc-Si:H material quality on the device perfor ...

EPFL2013

A Natural Helical Crystal Lattice Model for Carbon Nanotubes

Nicola Marzari

We propose a novel helical crystal lattice model for chiral and achiral carbon nanotubes (CNTs) where the unit cell and the helical crystal vector are defined in a unique and systematic manner for arbitrary CNTs. The small unit cell of this helical crystal ...

Amer Chemical Soc2013

Conductance Switching and Many-Valued Logic in Porphyrin Assemblies

Nicola Marzari

We investigate quantum interference in the transport properties of porphyrin-based molecular devices, and are able to develop a minimal but qualitatively accurate model of conductance based on the maximally localized Wannier functions of just the isolated ...

Amer Chemical Soc2013

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To further lower production costs and increase conversion efficiency of thin-film silicon solar modules, challenges are the deposition of high-quality microcrystalline silicon (μc-Si:H) at an increased rate and on textured substrates that guarantee efficie ...

2012