2PFC™ Image Sensors: Better Image Quality at Lower Cost

A modification to the standard Bayer CFA and photodiode structure for CMOS image sensors is proposed, which we call 2PFC™, meaning “Two Pixel, Full Color”. The blue and red filters of the Bayer pattern are replaced by magenta filters. Under each magenta filter are two stacked, pinned photodiodes; the diode nearest the surface absorbs mostly blue light and the deeper diode absorbs mostly red light. The magenta filter absorbs green light, improving color separation between the resulting blue and red diodes. The dopant implant defining the bottom of the red-absorbing region can be made the same as the green diodes, simplifying the fabrication. Since the spatial resolution for the red, green, and blue channels are identical, color aliasing is greatly reduced. Luminance resolution can also be improved, the thinner diodes lead to higher well capacity with resulting better dynamic range, and fabrication costs can be similar to or less than standard Bayer CMOS imagers. Also, the geometry of the layout lends itself naturally to frequency-based demosaicing.

2PFC (Two Pixels, Full Color): Image Sensor Demosaicing and Characterization

Daniel Tamburrino

We propose a modification to the standard Bayer CFA and photodiode structure for CMOS image sensors, which we call 2PFC (Two Pixels, Full Color). The blue and red filters of the Bayer pattern are replaced by a magenta filter. Under each magenta filter are two stacked, pinned photodiodes; the diode nearest the surface absorbs mostly blue light and the deeper diode absorbs mostly red light. The magenta filter absorbs green light, improving color separation between the blue and red diodes. We first present a frequency-based demosaicing method, which takes advantage of the new 2PFC geometry. Due to the spatial arrangement of red, green, and blue pixels, luminance and chrominance are very well separated in the Fourier space, allowing for computationally inexpensive linear filtering. In comparison with state-of-the-art demosaicing methods for the Bayer CFA, we show that our sensor and demosaicing method outperform the others in terms of color aliasing, PSNR, and zipper effect. As demosaicing alone does not determine image quality, we also analyze the whole system performance in terms of resolution and noise.

2010

Exploring information retrieval using image sparse representations

William Guicquéro

New advances in the field of image sensors (especially in CMOS technology) tend to question the conventional methods used to acquire the image. Compressive Sensing (CS) plays a major role in this, especially to unclog the Analog to Digital Converters which are generally representing the bottleneck of this type of sensors. In addition, CS eliminates traditional compression processing stages that are performed by embedded digital signal processors dedicated to this purpose. The interest is twofold because it allows both to consistently reduce the amount of data to be converted but also to suppress digital processing performed out of the sensor chip. For the moment, regarding the use of CS in image sensors, the main route of exploration as well as the intended applications aims at reducing power consumption related to these components (i.e. ADC & DSP represent 99% of the total power consumption). More broadly, the paradigm of CS allows to question or at least to extend the Nyquist-Shannon sampling theory. This thesis shows developments in the field of image sensors demonstrating that is possible to consider alternative applications linked to CS. Indeed, advances are presented in the fields of hyperspectral imaging, super-resolution, high dynamic range, high speed and non-uniform sampling. In particular, three research axes have been deepened, aiming to design proper architectures and acquisition processes with their associated reconstruction techniques taking advantage of image sparse representations. How the on-chip implementation of Compressed Sensing can relax sensor constraints, improving the acquisition characteristics (speed, dynamic range, power consumption) ? How CS can be combined with simple analysis to provide useful image features for high level applications (adding semantic information) and improve the reconstructed image quality at a certain compression ratio ? Finally, how CS can improve physical limitations (i.e. spectral sensitivity and pixel pitch) of imaging systems without a major impact neither on the sensing strategy nor on the optical elements involved ? A CMOS image sensor has been developed and manufactured during this Ph.D. to validate concepts such as the High Dynamic Range - CS. A new design approach was employed resulting in innovative solutions for pixels addressing and conversion to perform specific acquisition in a compressed mode. On the other hand, the principle of adaptive CS combined with the non-uniform sampling has been developed. Possible implementations of this type of acquisition are proposed. Finally, preliminary works are exhibited on the use of Liquid Crystal Devices to allow hyperspectral imaging combined with spatial super-resolution. The conclusion of this study can be summarized as follows: CS must now be considered as a toolbox for defining more easily compromises between the different characteristics of the sensors: integration time, converters speed, dynamic range, resolution and digital processing resources. However, if CS relaxes some material constraints at the sensor level, it is possible that the collected data are difficult to interpret and process at the decoder side, involving massive computational resources compared to so-called conventional techniques. The application field is wide, implying that for a targeted application, an accurate characterization of the constraints concerning both the sensor (encoder), but also the decoder need to be defined.

EPFL2015

Ultra-Low-Temperature Silicon and Germanium-on-Silicon Avalanche Photodiodes

Mahdi Aminian

In this thesis we propose the use of photodiodes fabricated in planar technologies to address the detection problem in these applications. A number of solutions exist, optimized for these wavelengths, based on Germanium (Ge) and other III-V materials. In this thesis we focused on Ge thanks to its versatility and ease to use in the clean room. The main advantage of this material is in fact a good compatibility with Silicon and standard CMOS processes. Note that the proposed technology is not based on Silicon/Germanium (SiGe), whereby Ge is used to strain Si to achieve higher bandwidth in Si, not higher sensitivity. In our pure Ge approach, Ge is grafted onto Si (Ge-on-Si), achieving high responsivity at wavelengths of 900nm and higher. The proposed devices can operate in avalanche mode (avalanche photodiodes - APDs), and in Geiger mode (Geiger mode APDs (GAPDs) or single-photon avalanche diodes (SPADs)). To combine the advantages of Ge with single-photon sensitivity and excellent timing resolution of Si-based SPADs, this thesis proposes a new generation of SPADs, achieved in collaboration with Prof. Nanver at TUDelft, aimed at near-infrared range. The fabrication process of the Ge-on-Si SPAD approach, which we are investigating together with the TUDelft group, consists of a standard CMOS process combined with post-processing steps to grow Ge on top of a Si/SiO2 layer. In our study we have investigated the potential for a new generation of massively parallel, Ge-on-Si sensors fabricated in fully CMOS compatible technology. The objective was to address the next challenges of super-parallel pixel arrays, while exploiting the advantages of Ge substrate. The key technology developed in the thesis is a selective chemical-vapor deposition (CVD) epitaxial growth. A novel processing procedure was developed for the p+ Ge surface doping by a sequence of pure-Ga and pure-B depositions (PureGaB). The resulting p+n diodes have exceptionally good I-V characteristics with ideality factor of ~1.1 and low saturation currents. They can be operated both in proportional and in Geiger mode, and exhibit relatively low dark counts. We also looked at techniques to improve red and infrared sensitivity in conventional deep-submicron CMOS processes, by careful selection of standard layers at high depths in the Si substrate. Using the proposed approach, 12 µm-diameter SPADs were fabricated in 0.18µm CMOS technology showing low dark count rates (363 cps) at room temperature and considerably lower rates at cryogenic temperatures (77 K), while the FWHM timing jitter is as low as 76 ps. That of cryogenic SPADs is a novel research direction and in this thesis it was advocated as a significant trend for the future of optical sensing, especially in mid-infrared wavelengths. Low temperature characterizations reported in this thesis exposed how the relevant properties of fabrication materials, such as strength, thermal conductivity, ductility, and electrical resistance are changing. One of the most important properties is superconductivity in materials cooled to extreme temperatures: this is an important trend that will be pursued in the future activities of our group.