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Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...
The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...
We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. The analysis is based on a recently develo ...
I report on the effect of a moderate excess electron population on nonlinearities in modulation-doped CdTe quantum wells. I show that the electron population does not qualitatively affect the nature of correlations between excitons. In this respect, I brin ...
The present doctoral thesis aims to contribute to the field of organic semiconductor physics and technology, both of which have become fast growing disciplines. Two technological applications are emerging from these research efforts: Organic light-emitting ...
We describe recent continuous wave studies of stimulated polariton scattering in semiconductor microcavities, with emphasis on the variety of new physics which has been observed in the last few years. The ability to manipulate both exciton and photon prope ...
We present a novel semiconductor structure in which 0D polaritons coexist with 2D microcavity polaritons. Spatial trapping of the 2D microcavity polaritons results from the confinement of their photonic part in a potential well, consisting of an adjustable ...
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible ...
This paper describes recent work on high-occupancy effects in semiconductor microcavities, with emphasis on the variety of new physics and the potential for applications that has been demonstrated recently. It is shown that the ability to manipulate both e ...
Institute of Electrical and Electronics Engineers2002
We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...
