Monolithically integrated optical displacement sensor in GaAs/AlGaAs
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This PhD thesis describes the experimental study of wurtzite III-nitride semiconductors grown on non-polar crystal orientations, namely (1120) a- and (1010) m-planes. Hindered by poor material quality, they were not as extensively investigated as the polar ...
A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...
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A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...
