Monolithically integrated optical displacement sensor in GaAs/AlGaAs
Publications associées (36)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
In this work, we present a correlation between the morphological characterization of InyAl1−yAs/InxGa1−xAsheterostructures grown on InP substrates for high electron mobility transistors(HEMTs) applications as determined by transmission electron microscopy, ...
Strain-compensated InAlAs/lnGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain s ...
The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their use in vertical cavity structures is reviewed. We discuss the various nitride material systems employed to design Bragg mirrors and microcavities, namely the Al-x(G ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
We present a comparison between the predictions of two theoretical models and experimental results on ultrathin GaAs layers with a thickness in the range from 1 to 8 ML embedded in bulk (AlxGa1-x)As, 0.30 less than or equal to x less than or equal to 0.34. ...
We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.7 ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatu ...