Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Publications associées (51)
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The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...
Continuum solvation methods can provide an accurate and inexpensive embedding of quantum simulations in liquid or complex dielectric environments. Notwithstanding a long history and manifold applications to isolated systems in open boundary conditions, the ...
Amer Physical Soc2014
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It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segment ...
Amer Inst Physics2017
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Owing to its peculiar energy dispersion, the quantum capacitance property of graphene can be exploited in a two- dimensional layered capacitor configuration. Using graphene and boron nitride, respectively, as the electrodes and the insulating dielectric, a ...
Springer Nature2017
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The effect of varying the thickness of Pt top electrodes made by the electron beam induced deposition technique on the domain nucleation characteristics of Pb(Zr,Ti)O-3 films has been investigated by piezoresponse force microscopy. The advantage of this ex ...
Elsevier Science Sa2017
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During the design phase of a modular multilevel converter (MMC), an accurate loss evaluation of the submodule (SM) plays an important role. In this paper, a method based on the analytical description of the MMC key waveforms that allows to directly obtain ...
Institute of Electrical and Electronics Engineers2017
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The paper presents a set of experimental investigations related to the dynamic behavior of supercapacitors. The experimentally observed results are then used as inputs for the development of an improved version of one of the most common supercapacitor RC-e ...
Institute of Electrical and Electronics Engineers2014
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An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alt ...
Institute of Electrical and Electronics Engineers2013
, ,
The paper presents a set of experimental investigations related to the study of the dynamic behavior of supercapacitors. The experimentally-inferred results are then used as inputs for an improved version of one of the most common supercapacitor RC-circuit ...
2013
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This paper proposes a new experimental investigation of the ageing mechanisms of super capacitors. Starting from the main ageing mechanisms of these devices reported in the literature, the paper proposes a suitably developed procedure aimed at evaluating t ...
