Publication
Effect of substrate roughness on c-oriented AlN thin films
Publications associées (39)
Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL2024Strained crystalline nanomechanical resonators with quality factors above 10 billion
Tobias Kippenberg, Alberto Beccari, Nils Johan Engelsen, Sergey Fedorov
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...
NATURE PORTFOLIO2022Preparation of amorphous bismuth films by quenched condensation insode of a superconducting magnet
Topological phases in crystalline materials have drawn intense research interest due to their fundamentally unique properties and potential for applications ranging from quantum computation to spintronics. Recently, scientists have extended the theoretical ...
2022Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence
Andrea Ingenito, Gizem Nogay, Philipp Friedrich Hermann Löper
Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...
ELSEVIER SCIENCE BV2018Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence
Andrea Ingenito, Gizem Nogay, Philipp Friedrich Hermann Löper
Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...
IEEE2018Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells
Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...
EPFL2018Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence
Gizem Nogay, Philipp Friedrich Hermann Löper
In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurement ...
WILEY2018Explaining Morphological and Electrical Features of Boron-doped Zinc Oxide to Tailor New Electrodes for Photovoltaics
TCOs are a class of metal oxides that combine transparency to visible light with electrical conductivity. Each TCO is characterized by the trade-off of these two properties which can be tuned for a particular application. This thesis is dedicated to the in ...
EPFL2016Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells
We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the ...
Ieee-Inst Electrical Electronics Engineers Inc2014Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique
In this study, we report the morphological and structural properties of amorphous and nanocrystalline Si thin films deposited by inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) technique at low substrate temperatures using H-2 dilut ...
Pergamon-Elsevier Science Ltd2014