A Widely-Tunable and Ultra-Low-Power MOSFET-C Filter Operating in Subthreshold
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...
Continuous transistor scaling due to improvements in CMOS devices and manufacturing technologies is increasing processor power densities and temperatures; thus, creating challenges to maintain manufacturing yield rates and reliable devices in their expecte ...
Wireless communications are showing an explosive growth in emerging consumer and military applications of radiofrequency (RF), microwave, and millimeter-wave circuits and systems. Applications include wireless personal connectivity (Bluetooth), wireless lo ...
Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...
A novel approach for implementing MOS current-mode logic (MCML) circuits that can operate with ultra low bias currents is introduced. Measurements of test structures fabricated in 0.18 μm CMOS technology show that the proposed PMOS load device concept can ...
This article presents a novel and robust approach for implementing ultra-low power MOS current mode logic (MCML) circuits. To operate at very low bias currents, a simple and compact high resistance load device has been introduced. Operating in subthreshold ...
In this paper, we present a new microfabricated orthogonal fluxgate sensor structure. The sensor consists of an electroplated copper excitation rod surrounded by an electroplated permalloy layer and has planar pick-up coils for signal detection. The use of ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...