Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
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This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...
EPFL2023
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Domain generalization (DG) aims to learn a model from multiple training (i.e., source) domains that can generalize well to the unseen test (i.e., target) data coming from a different distribution. Single domain generalization (SingleDG) has recently emerge ...
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AMER PHYSICAL SOC2023
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Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...
The present invention describes an imaging system that allows visualization of a wide range of samples both in terms of morphology and in terms of material (e.g. density distribution, varying chemical composition, or anything that induces a change of optic ...
Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. Integrated circuits and certain silicon-based quantum ...
While the extant innovation literature has provided extensive evidence of the so-called "demand-pull" effect, the possible diverse impact of demand evolution on product vs process innovation activities has not been yet investigated. This paper develops a f ...
