Low noise, low power front end electronics for pixelized TFA sensors
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Recently, artificial intelligence (AI) systems gain an increasing popularity and their development is fast. One of the most important fields of the AI system development are artificial neural networks (ANN’s) which, due to continuous progress in microelect ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...
Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronic ...
Institute of Electrical and Electronics Engineers2009
Since the emergence of Silicon On Insulator (SOI) technology the research activities have been concentrated on a detailed analysis of SOI devices and their use in different application fields (low-voltage, low-power circuits, high temperature electronics, ...
Wafer scale nanostencil lithography is used to define 200 nm scale mechanically resonating silicon cantilevers monolithically integrated into CMOS circuits. We demonstrate the simultaneous patterning of ~2000 nanodevices by post-processing standard CMOS wa ...
Wafer scale nanostencil lithography is used to define 200 nm scale mechanically resonating silicon cantilevers monolithically integrated into CMOS circuits. We demonstrate the simultaneous patterning of ~2000 nanodevices by post-processing standard CMOS wa ...
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo- multipliers. The proposal is to develop a novel photo- sensor, which is based on vertically integratin ...
Modern applications in industry, navigation and medicine demand small and sensitive magnetic field sensors. In this thesis we have developed a new planar micro fluxgate magnetometer. High resolution, low power consumption and orthogonal fields detection ma ...