Single- and multi-wall carbon nanotube field-effect transistors
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This review presents an overview of the recent progress made in the field of carbon nanotube (CNT)-based field-effect transistors (FETs). Starting from the simplest device architectures, various methods reported for fabricating CNT-FETs are presented. The ...
The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (+/- 20 V) pro ...
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. Th ...
Spin-dependent ballistic transport in a mesoscopic two-dimensional electron system with two metallic ferromagnetic electrodes is studied using the Landauer-Büttiker formalism. Our calculations predict a pronounced spin-valve effect in the ballistic regime ...
We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as hig ...
Deutsche Physikalische Gesellschaft & IOP Publishing Ltd2005
This thesis reports on the investigations performed on electrochemical functionalization and photoelectronic transport properties of individual single-wall carbon nanotubes (SWCNTs). The first part of the thesis is concerned with the controlled modificatio ...
Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical proper ...
This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...
Carbon nanotube field-effect transistors with Si(3)N(4) passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum c ...
