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We have used the finite element method to study the extraordinary magnetoresistance (EMR) effect of semiconductor-metal hybrid structures in rectangular device geometries. These have recently been found to exhibit intriguing properties interesting for magn ...
The reaction of the cluster complexes [Pt-3(mu -CO)(3)(PR3)(3)] (PR3 = PPh3 1, PPh(2)Bz 2, PCy3 3 and P(i)pr(3) 4) with dialkyl acetylenedicarboxylate, R'O2CC drop CCO2R' (R= CH3 or Bu-t) have been examined under various conditions. At low temperature the ...
A quasi one-dimensional model of spin transport in heterogeneous media based on the Boltzmann equation is presented in order to define the basic properties characterizing perpendicular spin transport in nanostructures. Experimental results are reviewed, fi ...
X-ray diffraction showed that the volume fraction of 90 degrees domains in tetragonal Pb(Zr,Ti)O-3 thin films could be substantially reduced by either hot de poling or by a bipolar pulsed-field process. In both cases, the (001) Bragg peak increased and the ...
Lead zirconium titanium oxide (PZT) thin films are used for their ferroelectric and piezoelectric properties. The composition of the PZT is very important for these properties, and may also be influenced by inter- diffusion with the bottom electrode, on wh ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
The methanol dehydration reaction was studied over environmentally benign, easily accessible and inexpensive K10 montmorillonite clay used as the catalyst at a temperature range between 200–700 °C. Nearly 100% selectivity towards dimethyl ether (DME) at 80 ...
Ballistic emission electron and X-ray photoelectron emission microscopy studies are presented for the sulfur-passivated Pt-GaP(001) buried metal-semiconductor interface. The topographic/ballistic images showed that the roughness of the metal-semiconductor ...
In order to investigate the dramatic enhancement of the oxidation rate of semiconductor materials, promoted by an alkali-metal overlayer, we exposed a GaAs(110) surface covered by a monolayer of Cs to oxygen, observing the photoemission spectra of As 2p, G ...
The electron temperature, pressure and density pro les from an extreme variety of shaped Ohmically heated sawtoothing plasmas in TCV ( Tokamak a Configuration Variable, B-T < 1.5T, R-0 = 0.88 m, a < 0.25 m) are compared to model predictions drawing from tw ...