Oxygen permeation, mechanical and structural properties of multilayer diffusion barrier coatings on polypropylene
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When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to the formation of powder, a new type of material, called hydrogenated polymorphous silicon (pm-Si:H) is obtained. This material has increased tran ...
Electron Beam Induced Deposition (EBID) allows deposition of three-dimensional micro- and nano-structures of conductive and insulating materials on a wide range of substrates. The process is based on the decomposition of molecules of a pre-selected precurs ...
Hydrogenated amorphous silicon has been prepared at a plasma excitation frequency in the very-high-frequency band at 70 MHz with the glow discharge technique at substrate temperatures between 280 and 50-degrees-C. The structural properties have been studie ...
We present a systematic study of the local hydrogen bonding in hydrogenated polymorphous silicon thin films (pm-Si:H), a heterogeneous material deposited on the edge of crystallinity, by means of Fourier transform infrared spectroscopy. A vibrational mode ...
Liquid metal embrittlement (LME) of copper by liquid bismuth is investigated at 300◦C. It is shown that a very rapid damage is due to the synergy between the external stress and the phenomenon of intergranular penetration (IGP). Tests of IGP, i.e. without ...
Hydrogenated polymorphous silicon (pm-Si:H) is a new material obtained by plasma-enhanced chemical vapour deposition by running the plasma close to powder formation. Preliminary studies have revealed the presence of silicon nanocrystallites embedded in an ...
Particle contamination formed in reactive plasmas imposes an upper limit on the rate for particle-free deposition. Conversely, these plasmas could be exploited to produce nanometric clusters and particles for various applications. Infrared absorption spect ...
Mat. Res. Soc. Symp. Proc. Vol. 507, Materials Research Society1998
The microstructure and chemical composition of sputtered thin films are strongly correlated with the deposition conditions. In the present work, we report the investigation of the film composition by electron probe microanalysis and photoemission experimen ...
a-Si:H films were prepared using pure silane in the temperature range from 200 degrees C up to 400 degrees C by the very high frequency glow discharge (VHF-GD) technique. During deposition a He/Ne laser beam directed across the discharge monitored powder f ...