Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
In this review we first present the two classes of non-reactive and reactive surfactants effective during homoepitaxy and heteroepitaxy, respectively. We then describe and analyse the results obtained by ''true'' surfactant-mediated molecular-beam epitaxy ...
High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
Variable temperature scanning tunneling microscopy at substrate temperatures between 25 and 550 K reveals a transition from diffusion limited aggregation to thermodynamic equilibrium in the two-dimensional (2D) monolayer growth of Ag on the Pt(111) surface ...
We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contra ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
Hall electrical properties measured by the van der Pauw method and low-temperature photoluminescence (77 K PL) spectra of pseudomorphic GaAs/InyGa1-yAs/AlGaAs modulation-doped field-effect transistor-type heterostructures grown by molecular-beam epitaxy we ...
