Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
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High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
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