Time-resolved spectroscopy of MBE-grown nitride based heterostructures
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Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum ...
Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transit ...
We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...
We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap an ...
Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In AlxGa1-xN/GaN quantum wells, due to the adverse ...
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible ...
We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening, and radiative and nonradiative recombinations in AlGaN/ GaN-based nanostructures. We perform the study of photoluminescence ...
We analyze the magnitude of degenerate two-photon gain of several quantum wells (QWs) in a resonant microcavity which is pumped off-resonantly by an optical field. A set of coupled phenomenological rate equations for electron-hole pairs and photons is deri ...
The size dependence of the coupling between longitudinal optical phonons and electron-hole pairs in InxGa1-xN/GaN quantum wells and quantum boxes has been investigated. The distribution of luminescence intensities between the phonon replicas and the zero-p ...