Potentialities of GaN-based microcavities grown on silicon substrates
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We have studied the electrical characteristics of p‐GaAs/n‐Si (100) heterojunction diodes grown by molecular beam epitaxy in an effort to determine the interface polarity. A Ga or As pre‐exposure was used prior to the growth of p‐GaAs on n‐Si substrates to ...
We have demonstrated an original approach for fabricating microcavities in GaN grown on Si. Holes are etched in the Si substrate and highly reflective dielectric mirrors are deposited on both front and back sides. The cavity has been optically characterize ...
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Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located an the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
