Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-an ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...
Multicolor, multi-quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active region. The In content of the wells is 15%-20% and the color is governed by carrier confinement a ...
We study photonic crystal (PhC)-assisted light extraction from gallium nitride (GaN) light-emitting diodes (LEDs). We focus on the issue of omnidirectional extraction, and we introduce a complex crystal lattice, namely the Archimedean tiling, which enables ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/ ...