Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
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The temp. dependence of the absorption and fluorescence spectra of colloidal CdSe nanocrystals was compared for three different shapes (dots, rods, and tetrapods) at 4-300 K. While the shift of the fluorescence max. indicates little dependence on the shape ...
This thesis deals with the optical characterization of single quantum dot devices emitting at 1300nm. Thanks to the development and optimization of the growth technique we were able to achieve at the same time emission at 1300nm and ultra low QD densities. ...
General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AIN dots are first discussed as a prototypical system. it is shown that the opti ...
Air pollution is becoming a more and more important aspect for transportation, particularly car emission in urban area. The objective of this paper is to evaluate the global emission of a transport network based on probe car and sensor data. Probe vehicles ...
Silicon oxide films containing CdS quantum dots have been deposited on glass substrates by a sol–gel dip-coating process. Hereby the CdS nanocrystals are grown during the thermal annealing step following the dip-coating procedure. Total hemispherical trans ...
