Growth and characterization of single quantum dot devices for fiber-based quantum communications

Single photon sources have recently attracted significant interest for their potential role in the future applications of quantum cryptography, and in the longer term, quantum computing. Among the different types of single photon emitters, semiconductor quantum dots (QDs) are good candidates as they combine discrete electronic transitions with the possibility of electrical excitation. Self-assembled InAs QDs on GaAs substrate are by far the most studied system as they can easily be grown into a microcavity structure. Embedding these into a microcavity is important as it increases the extraction efficiency, directionality and speeds up the photon emission. Until now, most studies have concentrated on QDs emitting in the λ

Polarization properties of semiconductor quantum dot and dash lasers

Philipp Ridha

Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures, each presenting a near-singular density of states. The QD size, shape, areal density and optical properties depend on growth parameters, such as growth temperature, growth rate and amount of InAs deposed. QDs are very suitable for optoelectronic device applications as during the epitaxial QD growth the phase transition relieves the strain elastically without introducing defects. Embedded in the active medium of a semiconductor laser diode QD's unique properties lead to improved and often novel characteristics as compared to bulk or quantum-well (QW) devices. In particular In(Ga)As QD lasers on GaAs substrates are of largest interest as the spectral range of their emission wavelength reaches further into the infrared than that of QW lasers of the same material system. The emission wavelength of strained InGaAs QW lasers is limited to about 1150nm, whereas in In(Ga)As QD lasers an emission wavelength beyond 1.3µm is feasible. Such kind of QD lasers performed – as recently reported – ultralow threshold current densities combined with decreased temperature sensitivity, relatively high modulation bandwith, low chirp, which has been already predicted many years ago. Beside quantum dot's application in semiconductor lasers, it has been suggested to use QDs also for the optical active region in so-called semiconductor optical amplifier (SOA). So far, experimentally it was possible to demonstrate in QD SOAs a much faster gain recovery time due to more effective carrier re-filling from excited states than in quantum well structures. Also a smaller noise figure ratio compared to QWs was predicted in QD SOA, but has not been experimentally demonstrated yet. However, two major constraints related to the limit of the high-frequency modulation of QD lasers and the QD SOA's polarization sensitivity are required to be first resolved, before it is possible to implement both technologies replacing QW devices in optical broad telecommunications devices. The polarization properties of semiconductor quantum dot/-dash lasers and amplifiers have been addressed in this PhD thesis. Within this research work – studying systematically several quantum dot and -dash heterostructure of different material families – two major goals have been identified: (1) characterization of the optical polarization properties of quantum dot/-dash structures embedded in the active region of semiconductor optical amplifiers and (2) realization of polarization-insensitive quantum dot based SOAs. Moreover, this thesis focuses on the understanding of the underlying physics being responsible for the QD's polarization and the dependence of the optical gain on the QD's aspect ratio and compositional material contrast. In terms of the experimental work broad area laser devices have been fabricated by applying different clean room processing methods like photolithography, metal deposition, wet and plasma etching. Through a subsequent device characterization using optoelectronic measurement techniques the polarization characteristics of dots and dashes have been accessed. From broad area laser device characterization – measuring the polarization-resolved edge-emitted electroluminescence (EL) – the polarization properties of standard Stranski-Krastanov (SK), closely- and columnar stacked InAs/GaAs quantum dots as well of closely-stacked InAs/InP quantum dots and columnar-stacked InAs/InP quantum dashes – in total 32 devices – have been evaluated. The comparison of the transversal magnetic (TM) versus -electric (TE) integrated EL signal for above heterostructures provided very promising results in order to achieve polarization-independent QD SOA: Starting from standard SK QDs – emitting dominantly in TE mode – it was possible first to enhance the TM EL signal compared to TE by epitaxial shape-engineering of the dot/dash structure of the QD's aspect ratio and the compositional material contrast in columnar-stacked InAs/GaAs (InAs/InP) QDs (QDashes), and then inverting the polarization direction from dominant TE towards dominant TM. The latter polarization transition has been also confirmed by photovoltage spectroscopy (PVS), and as well from room-temperature TM-lasing demonstration – both carried out by our research partner from the Cardiff University, Wales (UK). Introducing the well-known segment contact method for gain measurements, which is based on the analysis of the amplified spontaneous emission (ASE) generated by cavities of different length, it was possible to access both the TM and TE gain of such columnar-stacked InAs/GaAs quantum dots. The work was motivated and funded by the European Union project "Zero Order Dimension based Industrial components Applied to teleCommunications" (ZODIAC) within the sixth framework program. Very fruitful collaborations in order to exchange scientific ideas/know-how and achieving joint results have been established in a pan-European and multicultural inspired environment between four industrial partners – Alcatel Thales III-V Lab (France), Bookham (GB), Innolume – GmbH (Germany), Nanoplus Nanosystems and Technologies-GmbH (Germany) – and three national research institutes – Laboratory for Photonics and Nanostructures (France), The Tyndall National Institute (Irland), Saint-Petersburg Physics and Technology Centre for Research and Education of the Russian Academy of Science (Russia) – and three Universities: École Polytechnique Fédérale de Lausanne (Switzerland), Politechnika Wroclawska (Poland), Würzburg University (Germany). Besides this European ZODIAC project it was possible to establish with the Cardiff University, Wales (UK) a very constructive collaboration.

EPFL2008

Investigation into the coupling of quantum dots to photonic crystal nanocavities at telecommunication wavelengths

Laurent Balet

Recently, the emission of single photons with emission wavelength in the 1.3 µm telecommunication window was demonstrated for InAs quantum dots. This makes them strong candidates for applications such as quantum cryptography, and in a longer term, quantum computing. However, efficient extraction of the spontaneous emission from semiconductors still represents a major challenge due to total internal reflection at the semiconductor/air interface. In particular, single photon sources based on quantum dots are plagued by low extraction efficiency and poor coupling to single-mode fibers, typically on the order of 10-3 ~ 10-4, which prevents their application to quantum communication. To seek a solution to this problem, this thesis work explores the integration of quantum dots, with emission at 1.3 µm, in photonic crystal microcavities. Photons emitted in a mode of the cavity are funneled out of the semiconductor, and thus bypass the total internal reflection. In addition, the modified density of electromagnetic states in the cavity affects the emission lifetime of a weakly coupled emitter: in resonance, we assist to an increase of the emission rate, known as the Purcell effect, that would allow faster data transmission. Photonic crystal microcavities conveniently address this objective as they provide modes with the required small volumes and high quality factors. They also allow the engineering of the farfield pattern of the cavity modes, and thus of the collection efficiency. In the following pages, after brie y reviewing single photon emitters, the Purcell effect, and photonic crystal cavities, we present our results on the coupling of quantum dots to photonic crystal cavities. We report on the different strategies we used to control the tuning between the cavity mode and the quantum dot emission frequency. We also show our efforts in improving the collection of coupled photons by engineering the shape of the microcavity. Finally, we present our time-resolved measurements demonstrating the Purcell effect under optical and electrical operation.

EPFL2009

Functional Elements for Quantum-Dot-Based Integrated Quantum Photonics

Antoine Maxime Delgoffe

Quantum Integrated Photonics (QIP) harnesses quantum-states of light on tiny chips, from generation to processing and eventual detection. Within this context, this thesis explores functional QIP elements resulting from the monolithic integration of semiconductor quantum dots (QDs) in tailored photonic crystal systems of coupled cavities and waveguides. QDs present atom-like optical and electronic properties, which make them ideal for a deterministic, on-demand generation of single photons. Such QD-based devices can be expected to provide solutions for applications of QIP in quantum computing, communication and metrology. Here, we exploit the pyramidal site-controlled QD technology to reproducibly fabricate quantum photonic elements in which an arbitrary number of QD quantum emitters are embedded in photonic crystal (PhC) structures with alignment precision better than 50nm. Systematic investigation of reference structures with dense arrays of QDs to observe optical mode structures, and identical structures with only a few QDs for selective excitation and coupling to prescribed modes, is conducted using spatially-resolved micro-photoluminescence spectroscopy. Observations are consolidated by quantitative comparisons to 2D FDM numerical simulations. First, defect-potential PhC cavities are made by precise transverse shifts of selected holes in a PhC defect waveguide. In these structures, defect modes confined by a local mismatch in the photonic dispersion are observed, with peculiar polarization signatures. The fundamental defect modes display quality factors and mode volumes on par with conventional Ln=3 cavities. Defect modes can be selectively excited, and weak coupling of a single QD to cavity modes is demonstrated using thermal tuning. Next, tilted-potential PhC cavities supporting Airy-Bloch photonic modes are realized by staggered shifts of holes from 0 to smax along the axis. Such modes are suitable for local interaction and extraction of single photons from site-controlled QDs and their transmission to remote locations. Selective excitation of several modes with properly positioned QDs is demonstrated. Weak coupling of a QD to a single mode is achieved by thermal tuning, showing features of Purcell effect. The quasi linear energy-position dispersion of the Airy-Bloch modes maxima provides a mean for constructing an efficient wavelength-multiplexed single-photon injector. Finally, a monolithic model structure, consisting of two PhC waveguides side-coupled to a center Ln=3 cavity, with four ports connected to suspended nanobeams and grating couplers for light extraction/injection, is fabricated and tested. Five QDs are embedded in specific positions; four can act as on-chip single photon sources while the fifth, embedded in the center cavity, could be used for photon processing functions. The quasi-resonant excitation of this fifth QD via its p-shell is demonstrated using a pump laser beam that is injected into a waveguide through the grating coupler. Part of the s-shell emission is coupled to another targeted optical channel, demonstrating a complete photonic connectivity of all elements, a fundamental requirement towards on-chip processing. The results of this thesis consolidate the assets of the site-controlled pyramidal QD technology and tailored PhC confinement towards the realization of functional elements for quantum integrated photonics circuits.

EPFL2020