Large built-in electric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
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The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
We study the ultrafast properties of secondary radiation of semiconductor quantum wells under resonant excitation. We show that the exciton density dependence allows one to identify the origin of secondary radiation. At high exciton densities, the emission ...
We develop a general quantum mechanical method to calculate the dispersion relations of polariton modes for a quantum well embedded in a semiconductor planar microcavity. The method is based on the properties of the Green's function;of the electromagnetic ...
A quantum theory of quantum well polaritons in semiconductor microcavities is developed. The model takes into account the coupling between the exciton level and the structured continuum of electromagnetic modes relative to the particular geometry of the mi ...
A quantum-mechanical model for quantum well polaritons in semiconductor microcavities is presented. The real and imaginary parts of the polariton dispersion are obtained. They represent, respectively, the position and the linewidth of the luminescence peak ...
The optical properties of low pressure metal organic vapor deposition grown GaAs/AlxGa1-xAs (x = 0.5) single quantum well structures (SQW) with grown-in dislocations (GD) were studied by low temperature cathodoluminescence (CL) and photoluminescence (PL). ...
This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were ...
Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike stat ...
Difficulties are described which are encountered in NMR spectroscopy when attempting to invert simultaneously several multiplets that comprise transitions which share common energy levels. These problems turn out to be due to the undesirable excitation of ...
We report on a transparent analysis of the luminescence spectra of dense electron-hole plasmas confined in GaAs/(Ga,Al)As quantum wells. We fit the spectra using the fact that the total number of particle states does not depend on collision broadening. Fur ...
