Magneto-photoluminescence of AlGaN/GaN quantum wells
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A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g factor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T. This has been caused by a rever ...
Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain dis ...
Quenching of the exciton luminescence of GaN epitaxial films and GaN/AlGaN quantum wells in an electric field is observed and attributed to impact ionization of excitonic states by hot electrons. It is found that impurity scattering rules the momentum rela ...
We present angle-resolved photoemission experiments on 1T-TiSe2 at temperatures ranging from 13K to 288K. The data evidence a dramatic renormalization of the conduction band below 100K, whose origin can be related to the new potential responsible for the c ...
The defect levels of the nitrogen dangling bond at the Si/SiO2 interface are determined through a density-functional approach. The composition grading at the interface is modeled through crystalline and amorphous models of stoichiometric SiO2, nitrided SiO ...
We use the intense, 5-ns-long, excitation pulses provided by the fourth harmonic of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser to induce a strong high-energy shift of the photoluminescence of a 7.8-nm-wide GaN/Al0.15Ga0.85N single quantum wel ...
We calculate defect levels of dangling bonds in germanium using hybrid density functionals. To validate our approach, we first consider the dangling bond in silicon finding two well-separated defect levels, in excellent correspondence with their experiment ...
The size dependence of the coupling between longitudinal optical phonons and electron-hole pairs in InxGa1-xN/GaN quantum wells and quantum boxes has been investigated. The distribution of luminescence intensities between the phonon replicas and the zero-p ...
Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. ...
The impact ionization of excitonic states is studied in epitaxial GaN films and GaN/AlGaN quantum well structures. The investigation is carried out by optical methods involving the observation of quenching of the exciton photoluminescence under an applied ...
