Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation
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We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
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This paper presents new implementations of a design method to obtain minimum energy adaptive structures. The design method was formulated in previous work [1, 2] for reticular structures equipped with sensors (e.g. strain, optical) and linear actuators. Th ...
