Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Titanium aluminium nitride (TiAlN)-based coatings are designed specially for applications where oxidation and wear resistance are primary demands, as in the case of cutting tools. Moreover the coatings are required to be thermally stable as well as have go ...
We present an automation technique for the growth of electron beam deposited tips on whole wafers of atomic force microscope cantilevers. This technique uses pattern recognition on scanning electron microscope images of successive magnifications to precise ...
In this paper we present our latest developments in high precision positioning and handling systems operating inside an SEM. The Laboratory in Scanning Electron Microscope concept (LAB-in-SEM) is proposed along with a description of our piezodriven manipul ...
We have performed a study of excitation power-dependent spectra of GaN/AlGaN single quantum wells (QWs). First, the experimental "blueshift" of the emission energy, due to screening of internal piezoelectric fields, was compared with the model calculations ...
Previous experimental studies have allowed us to observe peculiar localization effects of excitons in GaN/AlGaN quantum wells grown by MBE, as well as efficient nonradiative inter-well carrier transfers. In this work, we use the envelope-function approxima ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
We have applied the sol-gel process to generate optical microstructures in glass using in-house developed sol-gel materials. The synthesis of our sol-gel glass materials is based on the formation of particles of controlled size from organo-metallic compoun ...
GaAs/GaAlAs quantum wires grown by modulated flow rate metalorganic chemical vapour deposition were investigated by spatially resolved photoluminescence spectroscopy using a scanning near-field optical microscope. It was found that the wires decompose into ...