In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(1 1 1) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability. (C) 2002 Elsevier Science B.V. All rights reserved.
Elison de Nazareth Matioli, Armin Jafari, Riyaz Mohammed Abdul Khadar, Minghua Zhu
Anna Fontcuberta i Morral, Lucas Güniat, Valerio Piazza, Wonjong Kim