Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
Publications associées (51)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on ...
We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...
A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by che ...
We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the ed ...
Valence- and conduction-band offsets can be induced at GaAs(100) polar homojunctions by means of ultrathin Si intralayers. The microscopic interface dipole responsible for the creation of such offsets can be varied by changing the Si intralayer thickness; ...
In highly excited semiconductor systems near the transition from direct to indirect band structure (cross-over) the energetic distance between different conduction band minima is a nonmonotonous function of the excitation intensity. A theoretical explanati ...
Studies have been carried out on aqueous colloidal suspensions of semiconductors, principally by using laser flash-photolysis techniques, in order to scrutinize in detail the dynamics of light-induced charge transfer reactions occuring at the solid-electro ...
The interpretation of photoemission-spectromicroscopy studies of Au on GaSe requires a revision of established ideas about this interface, which has long been considered a prototype of Schottky-like systems. We find that the interface-formation process inv ...
We have created 0.35-0.45 eV band offsets at Ge homojunctions using Ga-As dipole intralayers, with the Ge valence band edge on the As side of the junction at lower energy. This is, to our knowledge, the first time that intralayer control of band discontinu ...
We studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis us ...