Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages
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Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 mu m were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both c ...
Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surfac ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
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Core/shell InGaN/GaN nanowire light emitting diodes (LEDs) based on vertically standing single nanowires and nanowire arrays were fabricated and extensively characterized. The emission of single wire LEDs with the same conformal contact geometry as the arr ...
Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates 3-D Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density ...
Institute of Electrical and Electronics Engineers2016
An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light t ...
Nowadays, light emitting diodes (LEDs) and laser diodes (LDs) are part of our daily life. More and more devices incorporate InGaN-based optoelectronic devices. In fact, since the first demonstration of a candela-class InGaN-based LED in the beginning of th ...
A fundamental step towards achieving an "on demand" single photon source would be the possibility of electrical pumping for a single QD and thus the integration of such a device in an opto-electronic circuit. In this work we describe the fabrication proces ...
