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Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates 3-D Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density with an improved linearity, above 1 A/mm at 5 V when normalized by an effective anode width, over three orders of magnitude lower reverse leakage current and superior heat dissipation. The sidewall Schottky contacts reduced the turn-on voltage and eliminated the nonideality caused by the AlGaN barrier. The large surface area of the tri-gate architecture greatly enhanced heat dissipation and largely reduced the average temperature as well as thermal resistance of the integrated tri-gate transistors. The trench conduction near SiO2/GaN interface, formed under forward bias at both sidewalls and bottom of nanowire trenches, compensated part of the self-heating degradation and improved the output linearity of the device. Optimal design for the tri-anode structure, based on a model of critical filling factor, was proposed to surmount the issue of partial removal of 2-D electron gas (2DEG), unveiling the potential of nanostructured GaN devices to achieve comparable or even larger output current than counterpart planar devices.
Remco Franciscus Peter van Erp
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao