Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures
Publications associées (50)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
The concept of field-effect transistor with ferroelectric gate in combination with the advanced technique of direct domain writing is applied for modulation of transport properties of 2D electron gas located close to the interface in a GaN/AlGaN heterostru ...
We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling th ...
We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate volt ...
We applied the internal photoemission technique to the direct observation of deep levels together with barrier heights and band discontinuities at different semiconductor heterostructure interfaces. Its performances and capabilities are superior to those o ...
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...
The responses of ion-sensitive FETs (ISFETs) with thermally grown SiO//2 gate regions and of electrolyte-SiO//2-Si (EOS) structures to stepwise changes in the pH were studied. A mechanism is also proposed in which one or other hydrogen-bearing species inte ...
We use the Kelvin method to study the synchrotron radiation induced surface photovoltage (SPV) on GaAs(110) as a function of metal coverage and temperature. We find that varying the temperature alone does not induce significant change in band bending in th ...
Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(110) as a function of metal coverage and temperature. On low doped n-samples, the low temperature SPV (0.55 eV) is almost equal to t ...