Publication
High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
Publications associées (33)
Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips
Tobias Kippenberg, Anat Siddharth
Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...
Optica Publishing Group2023Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb
Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...
AIP Publishing2023Platicon microcomb generation using laser self-injection locking
Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Yang Liu, Jijun He, Miles Henry Anderson
The past decade has witnessed major advances in the development and system-level applications of photonic integrated microcombs, that are coherent, broadband optical frequency combs with repetition rates in the millimeter-wave to terahertz domain. Most of ...
NATURE PORTFOLIO2022GaN vertical power devices on silicon substrates
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
EPFL2021III-nitride photonic cavities
Nicolas Grandjean, Raphaël Butté
Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...
WALTER DE GRUYTER GMBH2020Localized Photon Lasing in a Polaritonic Lattice Landscape
Daniel Oberli, Marcia Portella Oberli, Fauzia Jabeen, Morteza Navadeh Toupchi
Periodic photonic structures have attracted much interest due to their versatility for controlling light propagation. The dispersion of photon modes in photonic lattices exhibits an energy band structure analo-gous to the electronic one in crystals. An imp ...
AMER PHYSICAL SOC2020Integrated Si3N4 Soliton Microcomb Driven by a Compact Ultra-low-noise Laser
Tobias Kippenberg, Rui Ning Wang, Nicolas Volet, Junqiu Liu, Erwan Guillaume Albert Lucas, Arslan Sajid Raja, Jijun He
We generate 100-GHz soliton microcombs in a photonic integrated high-Q Si3N4 microresonator using an ultra-compact, high-power and low-frequency-noise semiconductor-based laser. The soliton is initiated via direct current tuning of the laser. (C) 2019 The ...
IEEE2019III-Nitride Semiconductor Photonic Nanocavities on Silicon
Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...
EPFL2018Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain
III-nitride waveguides featuring AlInN claddings and GaN/AlGaN quantum wells (QWs) offer promising perspectives for applications in many fields of short-wavelength photonics. Thanks to their nearly lattice-matched nature, these structures exhibit an excell ...
EPFL2018