High performance solar blind detectors based on AlGaN grown by MBE and MOCVD
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The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
This work discusses the near edge photoluminescence and reflectivity of GaN layers grown on sapphire using three different methods. Particular emphasis is given to the importance of strain effects on intrinsic properties, as obtained from reflectivity, and ...
Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...
Collective Thomson scattering, using a high-power pulsed D2O laser at 385-mu-m and a heterodyne receiver system, has provided local ion temperature (T(i)) measurements of the plasma in the tokamak chauffage Alfven (TCA) tokamak. Recent improvements in the ...
