High efficiency top-emitting microcavity light-emitting diodes
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In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
Multicolor, multi-quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active region. The In content of the wells is 15%-20% and the color is governed by carrier confinement a ...
High-efficiency top-emitting InGaAs/AlGaAs microcavity light-emitting diodes (MCLEDs) have been optimized and fabricated. The structures were grown using molecular beam epitaxy on GaAs substrates. They consist of a three-period Be-doped distributed Bragg r ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
Microcavity light-emitting diodes (MCLEDs) with top-emitting geometry have been grown by molecular beam epitaxy on GaAs and Si substrates. External quantum efficiencies of up to 10% were obtained for 420 x 420 mu m(2) homoepitaxial devices. The efficiency ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
GaN/AlxGa1-xN quantum wells (QWs) are grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. Both the Al composition and the well thickness are determined in situ from reflection high-energy electron diffraction intensity oscillations. It is ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...