High efficiency top-emitting microcavity light-emitting diodes
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreement with ...
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...
We present a correlation between the behaviour of the RHEED specular reflected beam intensity during the initial phases of growth, the MBE growth conditions (T(s), P(As4), V(GaAs)), and the surface morphology examined by Nomarski contrast microscopy after ...
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures o ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
Room‐temperature photoreflectance (PR) measurements have been used to investigate the optical transition energies in InxGa1−xAs/GaAs strained layer superlattice structures grown by molecular‐beam epitaxy (MBE). Sharp PR features indicating excellent optica ...
We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
