Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches [1,2], suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown that these devices highly benefit from a high gate dielectric constant, as the gate-channel capacitive coupling is improved, positively impacting the band-to-band tunneling at low voltages [3]. Temperature-dependent performances have also been studied: models and experiments show a slight degradation of TFET subthreshold slope and an increase in the Ion with temperature, due to energy bandgap narrowing [4,5]. In parallel, the integration of ferroelectric materials in MOSFET gate stacks is being considered for enhancing their subthreshold swing [6]. Furthermore, ferroelectric materials show a unique temperature behavior. According to Landau's theory, at the Curie temperature (Tc) the relative dielectric permittivity εFe ideally diverges [7] (Fig. 1). © 2010 IEEE.
Dragan Damjanovic, Xiaolong Li
Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi