Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between < 111 > and < 112 >, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Sonia Conesa Boj, Anna Fontcuberta i Morral, Père Roca i Cabarrocas, Libo Yu

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the < 111 >, < 112 > or < 001 > growth direction. When growing on the < 112 > and < 111 > directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm(-1), in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.

2010

Selective light induced chemical vapour deposition of titanium dioxide thin films

Estelle Wagner

Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substrate temperature, allowing even the use of polymer substrates. A home made LICVD reactor was set up, consisting of a main chamber in which the substrate was placed on a temperature controlled plate and could be irradiated perpendicularly through a window by a 250 ns long pulse XeCl excimer laser (308 nm) with a controlled fluence (energy per surface area per pulse). A liquid precursor (titanium tetra-isopropoxide) was brought by an oxygen carrier gas flow in the chamber and a nitrogen flow was added to prevent deposition on the window. The total pressure in the chamber was maintained at 10 mbar. Projection of a mask image on the substrate was realized. Titanium dioxide films could be deposited locally by this technique with a thickness ranging from few nanometers to several micrometers. Deposits were realized at substrate temperatures as low as room temperature and with fluences between 1 and 400 mJ/cm2. The deposited films were characterized by profilometry, Atomic Force Microscopy, optical microscopy, Scanning Electron Microscopy, Transmission Electron Microscopy, X-ray diffraction, Raman spectroscopy, X-ray Photoelectron Spectroscopy, UV-vis spectroscopy and ellipsometry. A detailed and systematic study of the influence of some selected process parameters (substrate temperature and irradiation dose principally) on the deposition rate and material properties was realized on glass and silicon substrates. An empirical equation of the growth rate as a function of the different experimental parameters was derived and was tested successfully to obtain a precise control of the deposited thickness (a precision better than 10 nm was demonstrated for films below 300 nm), with growth rates up to 300 nm/min. From this equation, a deposition mechanism involving both a photolytic reaction and a thermal contribution of the substrate temperature was proposed. The deposited material was shown to consist of TiO2 with a possible very low additional carbon contamination. Depending on the deposition conditions, amorphous, anatase or rutile material was deposited. One parameter explaining the variation of the crystalline state of the material was the variation of the laser induced temperature rise which was simulated theoretically in parallel. Surface temperature rises in the order of several hundreds of degrees were calculated during the laser pulse, varying with the substrate, the fluence and the film thickness. The optical properties of the deposited material vary in a correlated way with the crystalline state of the material, and high indexes of refraction (up to 2.6 at 633 nm) were measured. Selective deposition in the irradiated area was studied. Provided substrate temperature was kept below 150°C, no thermal deposition was observed, and deposits were strictly located in the irradiated area. The edge resolution (around 10 micrometers) was demonstrated to be due to the optical aberrations of the mask projection set up. No effect of substrate temperature and irradiation conditions on the resolution could be evidenced, but resolution decreased with increasing deposited thickness due to optical effects. Thanks to the low substrate temperature required for the deposition process, deposition on thermo- fragile substrates (such as polymers, in particular PMMA) was demonstrated. However, in the case of polymer substrates, the fluence had to be kept below 15 mJ/cm2 not to damage or ablate the polymers, resulting in very low growth rates (in the order of 10-3 nm/pulse). In these conditions, only amorphous films with about 10% of carbon contamination could be obtained. Additionally, films were shown to crack above a certain deposited thickness, which is attributed to thermal effects. As a matter of fact, calculations showed a high temperature rise up to 70°C of the polymer/oxide interface. Deposition on polymers coated with transparent conductive oxide was also demonstrated.

EPFL2003

Fabrication of Functional Silicon Surfaces using Metallic Nanostructures Produced by Block Copolymer Self-Assembly

Li Wang

Self-assembly is the autonomous organization of components into patterns or structures without human intervention. At the molecular level, self-assembly usually involves non-covalent interactions of various natures, such as van der Waals, electrostatic and hydrophobic interactions, hydrogen and coordination bonds. Thus, this process provides one solution to the fabrication of ordered aggregates from components with typical sizes in the submicron scale, which is a key to applications in nanotechnology. The work presented in this thesis aims at producing hybrid and functional nanostructured silicon surfaces using self-assembled metallic nanostructures. As self-assembling tool, we use polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) copolymers, which are amphiphilic molecules able to form well-defined nanostructures and to guide the positioning of metallic components into periodic arrangements. Various approaches were explored to reach this goal. First, self-assembled monolayers of PS-b-P2VP copolymer micelles were used as nanoreactors for the chemical synthesis of metal nanostructures of tunable dimensions and morphologies. This was achieved via a post-loading method, where the micelle cores are impregnated with metal salts after their deposition on silicon surfaces. Gold, silver and iron oxide nanoparticle (NP) arrays of controlled sizes and periodicities were produced. We also exploited the responsive properties of PS-b-P2VP micelles to create ordered arrays of gold nanorings having feature sizes below 100 nm. Surface plasmon resonance properties were studied and showed a significant change of optical properties between the gold particle and nanoring morphologies. Then, we focused our efforts on the controlled positioning of preformed gold NPs using PS-b-P2VP micelles as guiding templates. Two methods were developed. In the first, hierarchical positioning of NPs was achieved in one step during the spontaneous micelle phase inversion into nanoring structures. In the second, we used block copolymer-assisted lithography for producing periodic amino-silane nanopatterns, which then acted as electrostatic traps for the selective immobilization of gold NPs in aqueous solution. For both approaches, we showed the formation of ordered arrangements of individual gold NPs or clusters on silicon surfaces, whose morphologies, densities and periodicities could be tuned by simply varying the initial block copolymer molecular weights or deposition conditions. In a last part, we demonstrated the fabrication of functional silicon surfaces with high aspect ratio and controlled morphologies using self-assembled metallic patterns. Using a simple and efficient process called metal-assisted chemical etching (MAC-Etch), both highly porous silicon surfaces and ultra long silicon nanowires were produced. In particular, we reported for the first time the possible fabrication of free-standing nanoporous silicon membranes by this method and demonstrated the effective transport of molecules across the pores. Finally, the catalytic properties of self-assembled gold NPs were evaluated to grow vertically aligned silicon nanowires in a Low Pressure Chemical Vapor Deposition (LPCVD) reactor via a Vapor-Liquid-Solid (VLS) growth mechanism.