Near-field mapping of quantum dot emission from single-photonic crystal cavity modes
Publications associées (41)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Optical spectroscopy under varying temperature is used to investigate samples containing planes of self-assembled Ga1-xInxN quantum dots (0.15 < x < 0.20), embedded in a GaN matrix. The samples have been grown by molecular beam epitaxy on sapphire substrat ...
We discuss a detailed near-field spectroscopic study of the nanoscopic optical properties of a novel coupled wire-dot nanostructure grown on (31 1)A GaAs substrates. Photoluminescence spectra recorded with 150 mn spatial and 100 mueV spectral resolution pe ...
The advent of scanning near-field optical microscopy (SNOM) has augmented at a microscopic level the usefulness of optical spectroscopy in the region between 300 nm and 10 mum. Two-dimensional imaging of chemical constituents makes this a very attractive a ...
In this paper we performed steady-state and time-resolved near-field scanning optical spectroscopy on GaN/AlN quantum dot (QD) structures and InGaN/GaN multiple quantum wells (MQWs). The morphology of the QD sample is composed of islands in the 500-1000 nm ...
Femtosecond photoluminescence (PL) up-conversion studies in polychromatic mode and laser-power-dependence studies of the PL were carried out on colloidal solutions of CdSe quantum dots with diameters ranging from 2.4 to 4 nm. The main features of the spect ...
In this thesis work, we report scanning near-field optical photoluminescence spectroscopy measurements with at best 200 nm spatial resolution performed on disordered semiconductor V-groove AlGaAs/GaAs quantum wires. In order to interpret the results of the ...
GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (111), sapphire or 6H-SiC (0001) substrate have been investigated using photoluminescence, cathodoluminescence, Fourier transform infrared spectroscopy and attenuated total reflection s ...
Spatially resolved photoluminescence spectra of a single quantum well are recorded by near-field spectroscopy. A set of over four hundred spectra displaying sharp emission lines from localized excitons is subject to a statistical analysis of the two-energy ...
Near-field photoluminescence spectra of a single quantum well dominated by emission from localized excitons are subjected to a statistical analysis of the two-energy autocorrelation function, This analysis is compared to a theoretical model of the exciton ...
Near-field optical spectroscopy is used to investigate the effects of disorder in the optical processes in semiconductor quantum wires. We observe photoluminescence emissions from extended, delocalized excitons at low temperatures (5 K) and low excitation ...