Intraband carrier photoexcitation in quantum dot lasers
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Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented, Threshold current densities in broad area lasers were measured to be as ...
We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transpare ...
We present the design of a highly efficient, pulsed ammonia laser which is optically pumped by a commercial TEA CO2 laser and is line tunable in the spectral range of 780-930 cm(-1). The power, spectral, and temporal characteristics of the laser have been ...
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
We investigate the dependence of four-wave mixing response on the photon energy close to the fundamental exciton (X) resonance in GaAs quantum wells. We find that cross-polarised incident fields give rise to a non-linear signal which decays faster at energ ...