Publication

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

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Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlA ...
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This work describes a NRZ receiver data-path fabricated in 14nm bulk FinFET technology and characterized in an 850nm VCSEL based optical link up to 64Gb/s. It achieves 1.42pJ/bit energy efficiency while recovering PRBS-7 data (BER< 10-12) modulated by a VC ...
Ieee2017

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Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...
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A 1.5-W frequency-doubled semiconductor disk laser tunable over 40 nm at around 745 nm

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We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the >40 nm tuning range make the laser a promising tool for medical treatments that rely on phot ...
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Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

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Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...
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