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Ferroelectric Field Effect Transistor for Memory and Switch Applications

Publications associées (347)

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Field-effect-based chemical sensing using nanowire-nanoparticle hybrids: The ion-sensitive metal-semiconductor field-effect transistor

Klaus Kern, Kannan Balasubramanian, Vivek Pachauri

A new class of nanoscale devices called ion-sensitive metal-semiconductor field-effect transistors (nano-IS-MESFET) for sensing applications is reported. Nanoparticle-nanowire hybrids with active metal-semiconductor regions are operated as ion-sensitive fi ...

Amer Inst Physics2013

Recent enhancements in BSIM6 bulk MOSFET model

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is i ...

2013

All-optical polariton transistor

Romuald Houdré

Although optical technology provides the best solution for the transmission of information, all-optical devices must satisfy several qualitative criteria to be used as logic elements. In particular, cascadability is difficult to obtain in optical systems, ...

Nature Publishing Group2013

A Geiger Mode APD fabricated in Standard 65nm CMOS Technology

Edoardo Charbon, Hyungjune Yoon

We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounde ...

2013

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut, Christophe Lallement

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

Institute of Electrical and Electronics Engineers2013

Development of Reconfigurable Circuits for WPAN Applications

This thesis presents the development of a low-power analog-to-digital converter (ADC) which is intended to be used in WPAN receivers. WPAN devices are usually mobile and, therefore, operate on batteries. This puts a strict limitation on the power dissipati ...

EPFL2013

ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Nicolas Grandjean, Jean-François Carlin

We report on InAlN/GaN heterostructure metal-oxide-semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x(InN) 13, 17, and 21%) and ZrO2 gate-insulator/passivation. Static measurements yielded higher drai ...

Iop Publishing Ltd2013

Negative Capacitance Transistor

Alexandru Rusu

Silicon technology has advanced through the past four decades at exponential rate both in performance and productivity. Along with the miniaturization, the power demand grew also exponentially. New technologies are studied in order to develop switches that ...

EPFL2012

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012