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Lukasiewicz fuzzy logic networks and their ultra low power hardware implementation

Publications associées (35)

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With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Mihai Adrian Ionescu, Christian Enz, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

2019

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Igor Stolichnov, Farzan Jazaeri, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Mihai Adrian Ionescu, Nilay Dagtekin

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

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We extend ambipolar silicon nanowire transistors by using three independent gates and show an efficient approach to implement dual-threshold-voltage configurable circuits. Polarity and threshold voltage of uncommitted devices are determined by applying dif ...

2013