Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy
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We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...
We present a parallel, full wafer technique for deposition of catalyst on released scanning probe bodies for the growth of individual high aspect-ratio Si nanowire tips. 1-D probes are necessary for imaging high aspect-ratio nano-patterns, such as deep and ...
The growth of GaAs nanowires by the gallium-assisted method with molecular beam epitaxy (MBE) is presented in this review article. The structure of the grown nanowires was investigated by means of scanning and transmission electron microscopy as well as Ra ...
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum ...
Gallium arsenide p-i-n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
GaN(0001) thick layers were grown on c-plane sapphire substrates by molecular-beam epitaxy using NH3. The evaporation of such GaN layers in vacuum was studied as a function of substrate temperature. In situ laser reflectivity was used to quantitatively mea ...
We report the observation of confined modes in the mixed photon/exciton-like branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substrates. The energies of the confin ...
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...